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 BYV29X-600_2 ? NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 4 September 2007 3 of 10 NXP Semiconductors BYV29X-600 Recti?er diode ultrafast 5. Thermal characteristics 6. Isolation characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; see Figure 1 - - 5.5 K/W without heatsink compound - - 5.9 K/W Rth(j-a) thermal resistance from junction to ambient in free air - 55 - K/W Fig 1. Transient thermal impedance from junction to heatsink as a function of pulse width 001aaf257 10?2 10?1 1 10 Zth(j-h) (K/W) 10?3 ?6 tp (s) 10 10 1 10?1 10?5 10?3 10?2 10?4 tp t = p T P t T δ Table 5. Isolation limiting values and characteristics Th = 25 °C unless otherwise speci?ed. Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; relative humidity ≤ 65 %; clean and dust free - - 2500 V Cisol isolation capacitance from cathode to external heatsink; f = 1 MHz - 10 - pF |